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MRF7S16150HR3 mrf7s16150hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for wimax base station applications with frequencies up to 1700 mhz. suitable for wimax, wibro, bwa, and ofdm multicarrier class ab and class c amplifier applications. ? typical wimax performance: v dd = 28 volts, i dq = 1500 ma, p out = 32 watts avg., f = 1600 and 1660 mhz, 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 19.7 db drain efficiency ? 25.4% device output signal par ? 8.2 db @ 0.01% probability on ccdf acpr @ 5.25 mhz offset ? - 47.5 dbc in 0.5 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 1630 mhz, 150 watts cw output power ? p out @ 1 db compression point 150 watts cw features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 149 w cw case temperature 75 c, 32 w cw r jc 0.34 0.37 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf7s16150h rev. 1, 12/2008 freescale semiconductor technical data MRF7S16150HR3 mrf7s16150hsr3 1600- 1660 mhz, 32 w avg., 28 v wimax lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 MRF7S16150HR3 case 465a - 06, style 1 ni - 780s mrf7s16150hsr3 ? freescale semiconductor, inc., 2007 - 2008. all rights reserved.
2 rf device data freescale semiconductor MRF7S16150HR3 mrf7s16150hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) ic (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 348 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd = 28 vdc, i d = 1500 madc, measured in functional test) v gs(q) 2 2.7 3.5 vdc drain- source on - voltage (v gs = 10 vdc, i d = 3.48 adc) v ds(on) 0.1 0.2 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.09 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 585 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 363 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1500 ma, p out = 32 w avg., f = 1600 mhz and f = 1660 mhz, wimax signal, 802.16d, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 0.5 mhz channel bandwidth @ 5.25 mhz offset. power gain g ps 18.5 19.7 21.5 db drain efficiency d 24 25.4 ? % output peak - to - average ratio @ 0.01% probability on ccdf par 7.7 8.2 ? db adjacent channel power ratio acpr -58 - 47.5 -45 dbc input return loss irl ? - 12.1 -7 db 1. part internally matched both on input and output. (continued)
MRF7S16150HR3 mrf7s16150hsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances ofdm signal (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1500 ma, p out = 32 w avg., f = 1600 mhz and f = 1660 mhz, wimax signal, ofdm single - carrier, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. mask system type g @ p out = 32 w avg. point b at 3.5 mhz offset point c at 5 mhz offset point d at 7.4 mhz offset point e at 14 mhz offset point f at 17.5 mhz offset mask ? ? ? ? ? -27 -36 -41 -59 -62 ? ? ? ? ? dbc relative constellation error @ p out = 32 w avg. (1) rce ? - 29.6 ? db error vector magnitude (1) (typical evm performance @ p out = 32 w avg. with ofdm 802.16d signal call) evm ? 3.3 ? % rms typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1500 ma, 1600 - 1660 mhz bandwidth video bandwidth @ 180 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 20 ? mhz gain flatness in 60 mhz bandwidth @ p out = 32 w avg. g f ? 0.292 ? db average deviation from linear phase in 60 mhz bandwidth @ p out = 150 w cw ? 82.71 ? average group delay @ p out = 150 w cw, f = 1630 mhz delay ? 7.19 ? ns part - to - part insertion phase variation @ p out = 150 w cw, f = 1630 mhz, six sigma window ? ? 22.38 ? gain variation over temperature (-30 c to +85 c) g ? 0.01387 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.409 ? dbm/ c 1. rce = 20log(evm/100)
4 rf device data freescale semiconductor MRF7S16150HR3 mrf7s16150hsr3 figure 1. MRF7S16150HR3(hsr3) test circuit schematic z7 0.619 x 1.330 microstrip z8 0.284 x 0.190 microstrip z9 0.220 x 0.250 microstrip z10 0.531 x 0.084 microstrip pcb arlon cuclad 250gx - 0300- 55 - 22, 0.030 , r = 2.55 z1, z5, z11 0.744 x 0.084 microstrip z2 0.822 x 0.084 microstrip z3 0.252 x 1.240 microstrip z4 0.402 x 1.240 microstrip z6 0.111 x 1.330 microstrip v bias v supply rf output rf input dut c2 c3 c6 c7 c8 r1 z1 z2 z3 z4 c4 z7 c10 z6 z5 z9 z10 z11 z8 c1 + r2 b1 c9 + c5 ++ table 5. MRF7S16150HR3(hsr3) test circuit com ponent designations and values part description part number manufacturer b1 small ferrite bead 2743019447 fair rite c1 10 f, 35 v electrolytic capacitor emvy350ada100me55g nippon chemi - con c2, c8 0.01 f, 50 v chip capacitors c1825c103j5rac kemit c3, c5 10 pf chip capacitors atc100b100bt500xt atc c4, c10 47 pf chip capacitors atc100b470bt500xt atc c6, c7 22 f, 35 v tantalum capacitors t491x226k035at kemet c9 220 f, 50 v electrolytic capacitor emvy500ada221mj0g nippon chemi - con r1 1 k , 1/4 w chip resistor crcw12061001fkea vishay r2 10 , 1/4 w chip resistor crcw120610r1fkea vishay
MRF7S16150HR3 mrf7s16150hsr3 5 rf device data freescale semiconductor figure 2. MRF7S16150HR3(hsr3) test circuit component layout r1 b1 r2 c3 c2 c1 c4 c5 c6 c8 c7 c9 c10 cut out area
6 rf device data freescale semiconductor MRF7S16150HR3 mrf7s16150hsr3 typical characteristics irl, input return loss (db) acpr (dbc) 1560 f, frequency (mhz) figure 3. wimax broadband performance @ p out = 32 watts avg. ?16 0 ?4 ?8 ?12 14 24 23 22 ?54 30 28 26 24 ?24 ?30 ?36 ?42 d , drain efficiency (%) g ps , power gain (db) 21 20 19 18 17 16 15 1580 1600 1620 1640 1660 1680 1700 22 ?48 ?20 irl g ps acpr d v dd = 28 vdc, p out = 32 w (avg.), i dq = 1500 ma, 802.16d, 64 qam 3 / 4, 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf irl, input return loss (db) acpr (dbc) 1560 f, frequency (mhz) figure 4. wimax broadband performance @ p out = 64 watts avg. ?16 0 ?4 ?8 ?12 14 24 23 22 ?45 40 38 36 34 ?20 ?25 ?30 ?35 d , drain efficiency (%) g ps , power gain (db) 21 20 19 18 17 16 15 1580 1600 1620 1640 1660 1680 1700 32 ?40 ?20 irl g ps acpr d v dd = 28 vdc, p out = 64 w (avg.), i dq = 1500 ma 802.16d, 64 qam 3 / 4, 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf figure 5. two - tone power gain versus output power 100 16 21 1 i dq = 2250 ma 1875 ma p out , output power (watts) pep 750 ma 1500 ma 19 18 17 10 400 g ps , power gain (db) 20 1125 ma v dd = 28 vdc, i dq = 1500 ma f1 = 1625 mhz, f2 = 1635 mhz two?tone measurements, 10 mhz tone spacing figure 6. third order intermodulation distortion versus output power 0 i dq = 375 ma p out , output power (watts) pep 562.5 ma 750 ma 1500 ma 10 ?20 ?30 ?40 100 ?60 ?50 1 intermodulation distortion (dbc) imd, third order 400 ?10 937.5 ma v dd = 28 vdc, i dq = 1500 ma f1 = 1625 mhz, f2 = 1635 mhz two?tone measurements, 10 mhz tone spacing
MRF7S16150HR3 mrf7s16150hsr3 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) ?70 ?10 1 100 ?40 ?50 10 ?30 ?20 ?60 7th order 5th order 3rd order 400 figure 8. intermodulation distortion products versus tone spacing two?tone spacing (mhz) 10 ?60 0 im3?u ?20 ?30 ?50 1 100 imd, intermodulation distortion (dbc) ?40 im3?l im5?u im5?l im7?l im7?u ?75 ?15 ?50 ?55 ?60 ?70 ?45 ?65 figure 9. wimax, acpr, power gain and drain efficiency versus output power 0 p out , output power (watts) cw 60 35 30 10 10 300 20 acpr d , drain efficiency (%), g ps , power gain (db) acpr (dbc) d 40 25 15 g ps v dd = 28 vdc, i dq = 1500 ma f = 1630 mhz, 802.16d, 64 qam 3 / 4 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf v dd = 28 vdc, i dq = 1500 ma f1 = 1625 mhz, f2 = 1635 mhz two?tone measurements, 10 mhz tone spacing v dd = 28 vdc, p out = 180 w (pep), i dq = 1500 ma two?tone measurements (f1 + f2)/2 = center frequency of 1630 mhz 400 14 21 0 70 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 1500 ma f = 1630 mhz t c = ?30 c 25 c ?30 c 85 c 10 1 19 18 17 16 15 50 40 30 20 10 d , drain efficiency (%) g ps d g ps , power gain (db) 100 figure 11. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 200 15 21 0 100 16 17 18 i dq = 1500 ma f = 1630 mhz 300 v dd = 24 v 28 v ?10 45 50 55 1 100 ?40 ?35 ?30 ?25 ?20 20 60 25 c 85 c 19 20 32 v 5 t c = ?30 c 25 c ?30 c 85 c ?30 c 85 c 25 c
8 rf device data freescale semiconductor MRF7S16150HR3 mrf7s16150hsr3 typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 32 w avg., and d = 25.4%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 wimax test signal 10 0.0001 100 0 peak?to?average (db) figure 13. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf ?60 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 10 mhz channel bw 2 0 515 10 0 ?5 ?10 ?20 f, frequency (mhz) figure 14. wimax spectrum mask specifications ?15 acpr in 1 mhz integrated bw acpr in 1 mhz integrated bw
MRF7S16150HR3 mrf7s16150hsr3 9 rf device data freescale semiconductor z o = 5 z load z source f = 1700 mhz f = 1500 mhz f = 1500 mhz f = 1700 mhz v dd = 28 vdc, i dq = 1500 ma, p out = 32 w avg. f mhz z source z load 1500 1.09 - j3.76 1.00 - j2.35 1520 1.06 - j3.62 0.96 - j2.19 1540 1.04 - j3.48 0.93 - j2.03 1560 1.01 - j3.34 0.91 - j1.88 1580 0.99 - j3.21 0.88 - j1.74 1600 0.96 - j3.07 0.86 - j1.60 1620 0.94 - j2.94 0.83 - j1.46 1640 0.92 - j2.81 0.81 - j1.33 1660 0.90 - j2.69 0.79 - j1.20 1680 0.88 - j2.56 0.77 - j1.07 1700 0.86 - j2.44 0.76 - j0.95 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor MRF7S16150HR3 mrf7s16150hsr3 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465 - 06 issue g ni - 780 MRF7S16150HR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) case 465a - 06 issue h ni - 780s mrf7s16150hsr3
MRF7S16150HR3 mrf7s16150hsr3 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 june 2007 ? initial release of data sheet 1 dec. 2008 ? table 4, on characteristics, tightened v gs(q) max value from 3.8 to 3.5 to match production test value, p. 2 ? updated pcb information to show more specific material details, fig. 1, test circuit schematic, p. 4 ? updated part numbers in table 5, component designations and values, to latest rohs compliant part numbers, p. 4 ? updated fig. 13, ofdm 802.16d test signal, to show input signal only, p. 8 ? updated fig. 14, wimax spectrum mask specifications, to more accurately represent the wimax spectrum, p. 8
12 rf device data freescale semiconductor MRF7S16150HR3 mrf7s16150hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007 - 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 fax: +1 - 303- 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7s16150h rev. 1, 12/2008

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